검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer Chauhan P, Hasenohrl S, Dobrocka E, Vanco L, Stoklas R, Kovac J, Siffalovic P, Kuzmil J Applied Surface Science, 470, 1, 2019 |
| 2 |
Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells Liao JH, Huang HW, Cheng LC, Liu HH, Chyi JI, Cai DP, Chen CC, Lai KY Solar Energy Materials and Solar Cells, 132, 544, 2015 |
| 3 |
Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers Zheng ZY, Chen ZM, Wu HL, Chen YD, Huang SJ, Fan BF, Xian YL, Wu ZS, Wang G, Jiang H Journal of Crystal Growth, 387, 52, 2014 |
| 4 |
Gallium vacancies related yellow luminescence in N-face GaN epitaxial film Xu HY, Hu XB, Xu XG, Shen Y, Qu S, Wang CX, Li SQ Applied Surface Science, 258(17), 6451, 2012 |
| 5 |
Structure and energy of the 90 degrees partial dislocations in Wurtzite-GaN Savini G, Heggie MI, Ewels CP, Martsinovich N, Jones R, Blumenau AT Materials Science Forum, 483, 1057, 2005 |
| 6 |
Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures Ishikawa F, Hasegawa H Applied Surface Science, 212, 885, 2003 |
| 7 |
Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O-2/Ar plasmas Hsieh JT, Hwang JM, Hwang HL, Breitschadel O, Schweizer H Applied Surface Science, 175, 450, 2001 |
| 8 |
Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate Xu HZ, Bell A, Wang ZG, Okada Y, Kawabe M, Harrison I, Foxon CT Journal of Crystal Growth, 222(1-2), 96, 2001 |
| 9 |
Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition Jin SR, Ramsteiner M, Grahn HT, Ploog KH, Zhu ZQ, Shen DX, Li AZ, Metev P, Guido LJ Journal of Crystal Growth, 212(1-2), 56, 2000 |