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| No. | Article |
|---|---|
| 1 |
Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology Fang LWW, Zhao R, Yeo EG, Lim KG, Yang HX, Shi LP, Chong TC, Yeo YC Journal of the Electrochemical Society, 158(3), H232, 2011 |