검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
The impact of boron halo on phosphorus junction formation and stability Yeong SH, Colombeau B, Mok KRC, Benistant F, Chan L, Srinivasan MP Electrochemical and Solid State Letters, 11(7), H179, 2008 |
| 2 |
Understanding of carbon/fluorine co-implant effect on boron-doped junction formed during soak annealing Yeong SH, Colombeau B, Mok KRC, Benistant F, Liu CJ, Wee ATS, Chan L, Ramam A, Srinivasan MP Journal of the Electrochemical Society, 155(2), H69, 2008 |
| 3 |
Understanding of boron junction stability in preamorphized silicon after optimized flash annealing Yeong SH, Colombeau B, Poon CH, Mok KRC, See A, Benistant F, Tan DXM, Pey KL, Ng CM, Chan L, Srinivasan MP Journal of the Electrochemical Society, 155(7), H508, 2008 |
| 4 |
Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant Kah M, Smith AJ, Hamilton JJ, Sharp J, Yeong SH, Colombeau B, Gwilliam R, Webb RP, Kirkby KJ Journal of Vacuum Science & Technology B, 26(1), 347, 2008 |