화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Gram-scale solution-based synthesis of SnSe thermoelectric nanomaterials
Kundu S, Yi SI, Yu C
Applied Surface Science, 459, 376, 2018
2 Engineering electrical transport at the interface of conjugated carbon structures to improve thermoelectric properties of their composites
Wang H, Yi SI, Yu C
Polymer, 97, 487, 2016
3 Thermally Driven Large N-Type Voltage Responses from Hybrids of Carbon Nanotubes and Poly(3,4-ethylenedioxythiophene) with Tetrakis(dimethylamino) ethylene
Wang H, Hsu JH, Yi SI, Kim SL, Choi K, Yang G, Yu C
Advanced Materials, 27(43), 6855, 2015
4 Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2x8)/(2x4)
Hale MJ, Yi SI, Sexton JZ, Kummel AC, Passlack M
Journal of Chemical Physics, 119(13), 6719, 2003
5 Displacement of surface arsenic atoms by insertion of oxygen atoms into As-Ga backbonds
Sexton JZ, Yi SI, Hale M, Kruse P, Demkov AA, Kummel AC
Journal of Chemical Physics, 119(17), 9191, 2003
6 Adsorption of atomic oxygen on GaAs(001)-(2x4) and the resulting surface structures
Yi SI, Kruse P, Hale M, Kummel AC
Journal of Chemical Physics, 114(7), 3215, 2001
7 Spectroscopic studies of the modification of crystalline Si(111) surfaces with covalently-attached alkyl chains using a chlorination/alkylation method
Bansal A, Li XL, Yi SI, Weinberg WH, Lewis NS
Journal of Physical Chemistry B, 105(42), 10266, 2001
8 Effect of growth rate on the nucleation of alpha-Fe2O3 on alpha-Al2O3(0001) by oxygen-plasma-assisted molecular beam epitaxy
Yi SI, Liang Y, Chambers SA
Journal of Vacuum Science & Technology A, 17(4), 1737, 1999
9 Growth of GaS on GaAs(100) surfaces using the [(Bu-t)GaS](4) molecular precursor in ultrahigh vacuum
Yi SI, Chung CH, Weinberg WH
Journal of Vacuum Science & Technology A, 16(3), 1650, 1998
10 Temperature-programmed desorption and high-resolution electron energy loss spectroscopy studies of the interaction of water with the GaAs(001)-(4x2) surface
Chung CH, Yi SI, Weinberg WH
Journal of Vacuum Science & Technology A, 16(3), 1785, 1998