검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE Umeno K, Furukawa Y, Urakami N, Mitsuyoshi S, Yonezu H, Wakahara A Journal of Crystal Growth, 312(2), 231, 2010 |
| 2 |
Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage Yamane K, Kobayashi T, Furukawa Y, Okada H, Yonezu H, Wakahara A Journal of Crystal Growth, 311(3), 794, 2009 |
| 3 |
MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates Umeno K, Furukawa Y, Wakahara A, Noma R, Okada H, Yonezu H, Takagi Y, Kan H Journal of Crystal Growth, 311(7), 1748, 2009 |
| 4 |
III-V epitaxy on Si for photonics applications Yonezu H, Furukawa Y, Wakahara A Journal of Crystal Growth, 310(23), 4757, 2008 |
| 5 |
Growth of Si/III-V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits Furukawa Y, Yonezu H, Wakahara A, Ishiji S, Moon SY, Morisaki Y Journal of Crystal Growth, 300(1), 172, 2007 |
| 6 |
Growth and characterization of GaPN by OMVPE Wakahara A, Furukawa Y, Itoh S, Hatakenaka S, Yonezu H Journal of Crystal Growth, 300(1), 182, 2007 |
| 7 |
Band alignments of InGaPN/GaPN quantum well structures on GaP and Si Umeno K, Kim SM, Furukawa Y, Yonezu H, Wakahara A Journal of Crystal Growth, 301, 539, 2007 |
| 8 |
MBE growth of highly strained InGaPN/GaPN quantum well with high indium content Kim SM, Furukawa Y, Yonezu H, Umeno K, Wakahara A Journal of Crystal Growth, 293(2), 359, 2006 |
| 9 |
Difference of N concentrations in GaPN layers simultaneously grown on Si and GaP substrates Utsumi A, Furukawa Y, Yonezu H, Wakahara A Journal of Crystal Growth, 295(1), 12, 2006 |
| 10 |
Growth of BxAl1-xN layers using decaborane on SiC substrates Nakajima A, Furukawa Y, Yokoya H, Yonezu H Journal of Crystal Growth, 278(1-4), 437, 2005 |