| 1 |
Growth of BaIn2S4 layers through the hot-wall-epitaxy method and their electric/optical properties
Hong KJ, Jeong TS, Youn CJ
Journal of Crystal Growth, 433, 13, 2016 |
| 2 |
Hot-wall-epitaxy growth and electrical/optical characterization of epitaxial BaAl2S4/GaAs layers
Jeong JW, Hong KJ, Jeong TS, Youn CJ
Journal of Crystal Growth, 451, 120, 2016 |
| 3 |
Growth and Hall-effect/photocurrent analysis on BaAl2Se4 layers grown by hot wall epitaxy method
You SH, Hong KJ, Jeong TS, Youn CJ
Journal of Crystal Growth, 419, 31, 2015 |
| 4 |
Growth and photocurrent characteristics of the photoconductive MnAl2S4 layers grown by hot-wall epitaxy method
You SH, Hong KJ, Jeong TS, Lim KY, Youn CJ
Journal of Crystal Growth, 404, 116, 2014 |
| 5 |
Growth and electrical/optical characteristics of unintentional p-type BaIn2Se4 epilayers grown using hot wall epitaxy method
You SH, Hong KJ, Jeong TS, Youn CJ
Journal of Crystal Growth, 383, 140, 2013 |
| 6 |
Structural, electric, and optical properties of MgGa2Se4 epilayers grown by hot wall epitaxy method
You SH, Hong KJ, Jeong TS, Youn CJ
Journal of Crystal Growth, 361, 142, 2012 |
| 7 |
Wide band-gap investigation of modulated BeZnO layers via photocurrent measurement
Yu JH, Kim JH, Yang HJ, Kim TS, Jeong TS, Youn CJ, Hong KJ
Journal of Materials Science, 47(14), 5529, 2012 |
| 8 |
A study on structural formation and optical property of wide band-gap Be0.2Zn0.8O layers grown by RF magnetron co-sputtering system
Yu JH, Kim JH, Park DS, Kim TS, Jeong TS, Youn CJ, Hong KJ
Journal of Crystal Growth, 312(10), 1683, 2010 |
| 9 |
Post-growth annealing and wide bandgap modulation of BeZnO layers grown by RF co-sputtering of ZnO and Be targets
Yu JH, Park DS, Kim JH, Jeong TS, Youn CJ, Hong KJ
Journal of Materials Science, 45(1), 130, 2010 |
| 10 |
Electric-field effect of near-band-edge photoluminescence in bulk ZnO
Kim JH, Yu JH, Kim TS, Jeong TS, Youn CJ, Hong KJ
Journal of Materials Science, 45(15), 4036, 2010 |
