검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Photoresist removal process by hydrogen radicals generated by W catalyst Takata M, Ogushi K, Yuba Y, Akasaka Y, Tomioka K, Soda E, Kobayashi N Thin Solid Films, 516(5), 847, 2008 |
| 2 |
Influences of atomic hydrogen on porous low-k dielectric for 45-nm node Tomioka K, Soda E, Kobayashi N, Takata M, Uda S, Ogushi K, Yuba Y, Akasaka Y Thin Solid Films, 515(12), 5031, 2007 |
| 3 |
Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system Goto T, Hada T, Yanagisawa J, Wakaya F, Yuba Y, Gamo K Applied Surface Science, 159, 277, 2000 |
| 4 |
Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth Hada T, Goto T, Yanagisawa J, Wakaya F, Yuba Y, Gamo K Journal of Vacuum Science & Technology B, 18(6), 3158, 2000 |
| 5 |
Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system Yanagisawa J, Goto T, Hada T, Nakai M, Wakaya F, Yuba Y, Gamo K Journal of Vacuum Science & Technology B, 17(6), 3072, 1999 |
| 6 |
Interface states induced in GaAs by growth interruption during an in situ process Wakaya F, Matsubara T, Nakayama M, Yanagisawa J, Yuba Y, Takaoka S, Murase K, Gamo K Journal of Vacuum Science & Technology B, 16(4), 2313, 1998 |
| 7 |
Characterization of Si-doped layer in GaAs fabricated by a focused ion beam molecular beam epitaxy combined system Yanagisawa J, Nakayama H, Oka K, Nakai M, Wakaya F, Yuba Y, Takaoka S, Murase K, Gamo K Journal of Vacuum Science & Technology B, 15(6), 2930, 1997 |
| 8 |
Fabrication of Laterally Selected Si Doped Layer in GaAs Using a Low-Energy Focused Ion-Beam Molecular-Beam Epitaxy Combined System Yanagisawa J, Nakayama H, Wakaya F, Yuba Y, Gamo K Journal of Vacuum Science & Technology B, 14(6), 3938, 1996 |