화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers
Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH
Journal of Vacuum Science & Technology B, 28(1), 116, 2010
2 Study of interface degradation of Hf-silicate gate dielectrics during thermal nitridation process
Son SY, Jang JH, Kumar P, Singh RK, Yuh JH, Cho H, Kang CJ
Journal of Vacuum Science & Technology B, 27(1), 71, 2009
3 Transparent dual-gate InGaZnO thin film transistors: OR gate operation
Lim W, Douglas EA, Lee J, Jang J, Craciun V, Norton DP, Pearton SJ, Ren F, Son SY, Yuh JH, Shen H, Chang W
Journal of Vacuum Science & Technology B, 27(5), 2128, 2009
4 Thermal stability of the exchange-biased NiFe/IrMn/CoFe electrode in the magnetic tunnel junctions
Jeong HD, Lee JH, Yoon CS, Kim CK, Yuh JH
Applied Surface Science, 199(1-4), 6, 2002