| 1 |
Effects of buffer layer and nitrogen purification on optical properties of MBE-grown GaN on sapphire(0001)
Yang JH, Zsebok O
Thin Solid Films, 466(1-2), 21, 2004 |
| 2 |
Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs
Zsebok O, Thordson JV, Ilver L, Sodervall U, Andersson TG
Applied Surface Science, 166(1-4), 259, 2000 |
| 3 |
Nanocrystals at MBE-grown GaN/GaAs(001) interfaces
Zsebok O, Thordson JV, Ilver L, Andersson TG
Applied Surface Science, 166(1-4), 317, 2000 |
| 4 |
Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE
Zsebok O, Thordson JV, Zhao QX, Andersson TG
Applied Surface Science, 166(1-4), 423, 2000 |
| 5 |
GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy
Zhao QX, Zsebok O, Sodervall U, Karlsteen M, Willander M, Liu XQ, Chen YD, Lu W, Shen SC
Journal of Crystal Growth, 208(1-4), 117, 2000 |
| 6 |
SYNTHESIS OF GALLANE AMINE ADDUCTS AS POTENTIAL PRECURSORS FOR GAAS AND (ALGA)AS MOVPE PROCESSES AND THE CRYSTAL-STRUCTURE OF THE (GALLANE.1,3-BIS(DIMETHYLAMINO)PROPANE ) ADDUCT H3GA.N(CH3)2(CH2)3N(CH3)2
LORBERTH J, DORN R, WOCADLO S, MASSA W, GOBEL EO, MARSCHNER T, PROTZMANN H, ZSEBOK O, STOLZ W
Advanced Materials, 4(9), 576, 1992 |
