화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Boron diffusion in compressively stressed float zone silicon induced by Si3N4 films
Zaitsu Y, Shimizu T, Takeuchi J, Matsumoto S, Yoshida M, Abe T, Arai E
Journal of the Electrochemical Society, 145(1), 258, 1998
2 Effect of Stress in the Deposited Silicon-Nitride Films on Boron-Diffusion of Silicon
Osada K, Zaitsu Y, Matsumoto S, Yoshida M, Arai E, Abe T
Journal of the Electrochemical Society, 142(1), 202, 1995