검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Selected papers from ESSDERC 2014 Bez R, Meneghesso G, Pavan P, Zanoni E Solid-State Electronics, 113, 1, 2015 |
| 2 |
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation Marino FA, Bisi D, Meneghini M, Verzellesi G, Zanoni E, Van Hove M, You S, Decoutere S, Marcon D, Stoffels S, Ronchi N, Meneghesso G Solid-State Electronics, 113, 9, 2015 |
| 3 |
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs Rossetto I, Rampazzo F, Gerardin S, Meneghini M, Bagatin M, Zanandrea A, Dua C, di Forte-Poisson MA, Aubry R, Oualli M, Delage SL, Paccagnella A, Meneghesso G, Zanoni E Solid-State Electronics, 113, 15, 2015 |
| 4 |
High PAE high reliability AlN/GaN double heterostructure Medjdoub F, Zegaoui M, Linge A, Grimbert B, Silvestri R, Meneghini M, Meneghesso G, Zanoni E Solid-State Electronics, 113, 49, 2015 |
| 5 |
Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights Pierobon R, Meneghesso G, Zanoni E, Roccaforte F, La Via F, Raineri V Materials Science Forum, 483, 933, 2005 |
| 6 |
Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts Roccaforte F, La Via F, Raineri V, Pierobon R, Zanoni E Materials Science Forum, 457-460, 869, 2004 |
| 7 |
Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices Zanoni E, Meneghesso G, Menozzi R Journal of Crystal Growth, 210(1-3), 331, 2000 |