화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Selected papers from ESSDERC 2014
Bez R, Meneghesso G, Pavan P, Zanoni E
Solid-State Electronics, 113, 1, 2015
2 Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation
Marino FA, Bisi D, Meneghini M, Verzellesi G, Zanoni E, Van Hove M, You S, Decoutere S, Marcon D, Stoffels S, Ronchi N, Meneghesso G
Solid-State Electronics, 113, 9, 2015
3 Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs
Rossetto I, Rampazzo F, Gerardin S, Meneghini M, Bagatin M, Zanandrea A, Dua C, di Forte-Poisson MA, Aubry R, Oualli M, Delage SL, Paccagnella A, Meneghesso G, Zanoni E
Solid-State Electronics, 113, 15, 2015
4 High PAE high reliability AlN/GaN double heterostructure
Medjdoub F, Zegaoui M, Linge A, Grimbert B, Silvestri R, Meneghini M, Meneghesso G, Zanoni E
Solid-State Electronics, 113, 49, 2015
5 Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
Pierobon R, Meneghesso G, Zanoni E, Roccaforte F, La Via F, Raineri V
Materials Science Forum, 483, 933, 2005
6 Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts
Roccaforte F, La Via F, Raineri V, Pierobon R, Zanoni E
Materials Science Forum, 457-460, 869, 2004
7 Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices
Zanoni E, Meneghesso G, Menozzi R
Journal of Crystal Growth, 210(1-3), 331, 2000