검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology Zauner ARA, Aret E, van Enckevort WJP, Weyher JL, Porowski S, Schermer JJ Journal of Crystal Growth, 240(1-2), 14, 2002 |
| 2 |
Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates Kirilyuk V, Zauner ARA, Christianen PCM, Weyher JL, Hageman PR, Larsen PK Journal of Crystal Growth, 230(3-4), 477, 2001 |
| 3 |
Recent advances in defect-selective etching of GaN Weyher JL, Brown PD, Rouviere JL, Wosinski T, Zauner ARA, Grzegory I Journal of Crystal Growth, 210(1-3), 151, 2000 |
| 4 |
Determination of polarity of GaN cross-section TEM specimens using quantitative electron diffraction Zandbergen HW, Jansen J, Zauner ARA, Weyher JL Journal of Crystal Growth, 210(1-3), 167, 2000 |
| 5 |
Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation Zauner ARA, Weyher JL, Plomp M, Kirilyuk V, Grzegory I, van Enckevort WJP, Schermer JJ, Hageman PR, Larsen PK Journal of Crystal Growth, 210(4), 435, 2000 |
| 6 |
Can a foreign particle cause surface instability? Liu XY, van den Berg BEPG, Zauner ARA, Bennema P Journal of Physical Chemistry B, 104(50), 11942, 2000 |