검색결과 : 29건
| No. | Article |
|---|---|
| 1 |
High frequency characteristic of a monolithic 500 degrees C OpAmp-RC integrator in SiC bipolar IC technology Tian Y, Zetterling CM Solid-State Electronics, 135, 65, 2017 |
| 2 |
A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier Kargarrazi S, Lanni L, Zetterling CM Solid-State Electronics, 116, 33, 2016 |
| 3 |
Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001) Buchholt K, Eklund P, Jensen J, Lu J, Ghandi R, Domeij M, Zetterling CM, Behan G, Zhang H, Spetz AL, Hultman L Journal of Crystal Growth, 343(1), 133, 2012 |
| 4 |
Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures Esteve R, Reshanov SA, Savage S, Bakowski M, Kaplan W, Persson S, Schoner A, Zetterling CM Journal of the Electrochemical Society, 158(5), H496, 2011 |
| 5 |
Current gain of 4H-SiC bipolar transistors including the effect of interface states Domeij M, Danielsson E, Lee HS, Zetterling CM, Ostling M Materials Science Forum, 483, 889, 2005 |
| 6 |
Electrical characteristics of 4H-SiC BJTs at elevated temperatures Lee HS, Domeij M, Danielsson E, Zetterling CM, Ostling M Materials Science Forum, 483, 897, 2005 |
| 7 |
A 4H-SiC BJT with an epitaxially regrown extrinsic base layer Danielsson E, Domeij M, Lee HS, Zetterling CM, Ostling M, Schoner A, Hallin C Materials Science Forum, 483, 905, 2005 |
| 8 |
Extrinsic base design of SiC bipolar transistors Danielsson E, Domeij M, Zetterling CM, Ostling M, Schoner A Materials Science Forum, 457-460, 1117, 2004 |
| 9 |
High frequency measurements and simulations of SiC MESFETs up to 250 degrees C Liu W, Zetterling CM, Ostling M, Eriksson J, Rorsman N, Zirath H Materials Science Forum, 457-460, 1209, 2004 |
| 10 |
Simulation study of 4H-SiC junction-gated MOSFETs from 300 K to 773 K Lee HS, Koo SM, Zetterling CM, Danielsson E, Domeij M, Ostling M Materials Science Forum, 457-460, 1437, 2004 |