검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate Hoffmann V, Knauer A, Brunner C, Einfeldt S, Weyers M, Trankle G, Haberland K, Zettler JT, Kneissl M Journal of Crystal Growth, 315(1), 5, 2011 |
| 2 |
Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire Brunner F, Knauer A, Schenk T, Weyers M, Zettler JT Journal of Crystal Growth, 310(10), 2432, 2008 |
| 3 |
AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices Zorn M, Trepk T, Schenk T, Zettler JT, Weyers M Journal of Crystal Growth, 298, 23, 2007 |
| 4 |
Growth optimization during III-nitride multiwafer MOVPE using realtime curvature, reflectance and true temperature measurements Brunner F, Hoffmann V, Knauer A, Steimetz E, Schenk T, Zettler JT, Weyers M Journal of Crystal Growth, 298, 202, 2007 |
| 5 |
In situ determination and control of AlGaInP composition during MOVPE growth Zorn M, Zettler JT, Knauer A, Weyers M Journal of Crystal Growth, 287(2), 637, 2006 |
| 6 |
On the AlAs/GaAs (001) interface dielectric anisotropy Hunderi O, Zettler JT, Haberland K Thin Solid Films, 472(1-2), 261, 2005 |
| 7 |
Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance Strittmatter A, Reissmann L, Trepk T, Pohl UW, Bimberg D, Zettler JT Journal of Crystal Growth, 272(1-4), 76, 2004 |
| 8 |
Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE Steins R, Kaluza N, Hardtdegen H, Zorn M, Haberland K, Zettler JT Journal of Crystal Growth, 272(1-4), 81, 2004 |
| 9 |
Routine growth of InP based device structures using process calibration with optical in-situ techniques Wolfram P, Steimetz E, Ebert W, Grote N, Zettler JT Journal of Crystal Growth, 272(1-4), 118, 2004 |
| 10 |
Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy Pohl UW, Potschke K, Kaiander I, Zettler JT, Bimberg D Journal of Crystal Growth, 272(1-4), 143, 2004 |