화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Effects of growth temperature and target material on the growth behavior and electro-optical properties of ZnO:Al films deposited by high-rate steered cathodic arc plasma evaporation
Liang CH, Hwang WS, Wang WL
Applied Surface Science, 333, 1, 2015
2 Texture surfaces and etching mechanism of ZnO:Al films by a neutral agent for solar cells
Jiang QJ, Lu JG, Zhang J, Yuan YL, Cai H, Wu CJ, Sun RJ, Lu B, Pan XH, Ye ZZ
Solar Energy Materials and Solar Cells, 130, 264, 2014
3 As-grown textured zinc oxide films by ion beam treatment and magnetron sputtering
Zhang WD, Bunte E, Ruske F, Kohl D, Besmehn A, Worbs J, Siekmann H, Kirchhoff J, Gordijn A, Hupkes J
Thin Solid Films, 520(12), 4208, 2012
4 Preparation of high transmittance ZnO:Al film by pulsed filtered cathodic arc technology and rapid thermal annealing
Gao F, Yu KM, Mendelsberg RJ, Anders A, Walukiewicz W
Applied Surface Science, 257(15), 7019, 2011
5 Novel etching method on high rate ZnO:Al thin films reactively sputtered from dual tube metallic targets for silicon-based solar cells
Zhu H, Hupkes J, Bunte E, Owen J, Huang SM
Solar Energy Materials and Solar Cells, 95(3), 964, 2011
6 Sputtering of ZnO:Al films from dual tube targets with tilted magnetrons
Zhu H, Bunte E, Hupkes J, Huang SM
Thin Solid Films, 519(7), 2366, 2011
7 Oxygen influence on sputtered high rate ZnO:Al films from dual rotatable ceramic targets
Zhu H, Hupkes J, Bunte E, Huang SM
Applied Surface Science, 256(14), 4601, 2010
8 Influence of working pressure on ZnO:Al films from tube targets for silicon thin film solar cells
Zhu H, Hupkes J, Bunte E, Gerber A, Huang SM
Thin Solid Films, 518(17), 4997, 2010
9 Effect of oxygen ambient on structural, optical and electrical properties of epitaxial Al-doped ZnO thin films on r-plane sapphire by pulsed laser deposition
Kumar M, Mehra RM, Choi SY
Current Applied Physics, 9(4), 737, 2009
10 Growth of ZnO:Al films by RF sputtering at room temperature for solar cell applications
Wang ZA, Chu JB, Zhu HB, Sun Z, Chen YW, Huang SM
Solid-State Electronics, 53(11), 1149, 2009