| 1 |
Composition dependence of dielectric and optical properties of Hf-Zr-silicate thin films grown, on Si(100) by atomic layer deposition
Tahir D, Oh SK, Kang HJ, Tougaard S
Thin Solid Films, 616, 425, 2016 |
| 2 |
Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier
Kang HY, Heo MY, Sohn HC
Current Applied Physics, 10(1), E22, 2010 |
| 3 |
Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation
Lee WJ, Cho MH, Kim YK, Baeck JH, Jeong IS, Jeong K, Chung KB, Kim SY, Ko DH
Thin Solid Films, 518(6), 1682, 2010 |
| 4 |
Characteristics of high-k gate oxide prepared by oxidation of multi-layered Hf/Zr/Hf/Zr/Hf metal films
Yu MT, Jeong SW, Lee HJ, Roh Y
Thin Solid Films, 516(7), 1563, 2008 |
| 5 |
Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEM
Ahn H, Chen HW, Landheer D, Wu X, Chou LJ, Chao TS
Thin Solid Films, 455-56, 318, 2004 |
| 6 |
Diffusion and incorporation of Zr into thermally grown SiO2 on Si(100)
Yamaoka M, Murakami H, Miyazaki S
Applied Surface Science, 216(1-4), 223, 2003 |
| 7 |
Depth profiling of ultrathin films using medium energy ion scattering
Kim J, Lennard WN, McNorgan CP, Hendriks J, Mitchell IV, Landheer D, Gredley J
Current Applied Physics, 3(1), 75, 2003 |
