화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures
Leute RAR, Heinz D, Wang J, Lipski F, Meisch T, Thonke K, Thalmair J, Zweck J, Scholz F
Journal of Crystal Growth, 370, 101, 2013
2 Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
Ploch S, Wernicke T, Thalmair J, Lohr M, Pristovsek M, Zweck J, Weyers M, Kneissl M
Journal of Crystal Growth, 356, 70, 2012
3 Coexistence of ferromagnetism and quantum Hall effect in Mn modulation-doped two-dimensional hole systems
Wurstbauer U, Soda M, Jakiela R, Schuh D, Weiss D, Zweck J, Wegscheider W
Journal of Crystal Growth, 311(7), 2160, 2009
4 Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks
Hertkorn J, Lipski F, Bruckner R, Wunderer T, Thapa SB, Scholz F, Chuvilin A, Kaiser U, Beer M, Zweck J
Journal of Crystal Growth, 310(23), 4867, 2008
5 Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates
Engl K, Beer M, Gmeinwieser N, Schwarz UT, Zweck J, Wegscheider W, Miller S, Miler A, Lugauer HJ, Bruderl G, Lell A, Harle V
Journal of Crystal Growth, 289(1), 6, 2006
6 Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers
Able A, Wegscheider W, Engl K, Zweck J
Journal of Crystal Growth, 276(3-4), 415, 2005
7 Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors
Kaiser S, Jakob M, Zweck J, Gebhardt W, Ambacher O, Dimitrov R, Schremer AT, Smart JA, Shealy JR
Journal of Vacuum Science & Technology B, 18(2), 733, 2000
8 Determination of interfacial roughness and its correlation in sputtered CoZr/Cu multilayers
Langer J, Mattheis R, Krausslich J, Senz S, Hesse D, Schuhrke T, Zweck J
Thin Solid Films, 319(1-2), 187, 1998
9 Quantitative-Analysis of Electron-Microscopic Micrographs of Multilayers
Schuhrke T, Zweck J, Hoffmann H
Thin Solid Films, 292(1-2), 118, 1997