검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC Wang H, Wu F, Byrappa S, Raghothamachar B, Dudley M, Wu P, Zwieback I, Souzis A, Ruland G, Anderson T Journal of Crystal Growth, 401, 423, 2014 |
| 2 |
Defect evolution during growth of SiC crystals Wu P, Yoganathan M, Zwieback I Journal of Crystal Growth, 310(7-9), 1804, 2008 |
| 3 |
Growth of large diameter SiC crystals by advanced physical vapor transport Anderson T, Barrett D, Chen J, Emorhokpor E, Gupta A, Hopkins R, Souzis A, Tanner C, Yoganathan M, Zwieback I, Choyke WJ, Devaty RP, Yan F Materials Science Forum, 483, 9, 2005 |
| 4 |
Growth of undoped (vanadium-Free) semi-insulating 6H-SiC single crystals Anderson TA, Barrett DL, Chen J, Emorhokpor E, Gupta A, Hopkins RH, Souzis AE, Tanner CD, Yoganathan M, Zwieback I Materials Science Forum, 483, 35, 2005 |
| 5 |
Advanced PVT growth of 2 & 3-inch diameter 6H SiC crystals Anderson TA, Barrett DL, Chen J, Elkington WT, Emorhokpor E, Gupta A, Johnson CJ, Hopkins RH, Martin C, Kerr T, Semenas E, Souzis AE, Tanner CD, Yoganathan M, Zwieback I Materials Science Forum, 457-460, 75, 2004 |