검색결과 : 131건
No. | Article |
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1 |
Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE Dinh DV, Amano H, Pristovsek M Journal of Crystal Growth, 512, 100, 2019 |
2 |
Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN Mogilatenko A, Knauer A, Zeimer U, Netzel C, Jeschke J, Unger RS, Hartmann C, Wollweber J, Dittmar A, Juda U, Weyers M, Bickermann M Journal of Crystal Growth, 505, 69, 2019 |
3 |
MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire Dinh DV, Amano H, Pristovsek M Journal of Crystal Growth, 502, 14, 2018 |
4 |
Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si Dinh DV, Parbrook PJ Journal of Crystal Growth, 501, 34, 2018 |
5 |
High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire Dinh DV, Hu N, Honda Y, Amano H, Pristovsek M Journal of Crystal Growth, 498, 377, 2018 |
6 |
Silicon doping of semipolar (11(2)over-bar2) AlxGa1-xN (0.50 <= x <= 0.55) Dinh DV, Pampili P, Parbrook PJ Journal of Crystal Growth, 451, 181, 2016 |
7 |
Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy Stellmach J, Mehnke F, Frentrup M, Reich C, Schlegel J, Pristovsek M, Wernicke T, Kneissl M Journal of Crystal Growth, 367, 42, 2013 |
8 |
Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE Nechaev DV, Aseev PA, Jmerik VN, Brunkov PN, Kuznetsova YV, Sitnikova AA, Ratnikov VV, Ivanov SV Journal of Crystal Growth, 378, 319, 2013 |
9 |
Facilitating growth of InAs-InP core-shell nanowires through the introduction of Al Haapamaki CM, Baugh J, LaPierre RR Journal of Crystal Growth, 345(1), 11, 2012 |
10 |
MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire Stellmach J, Frentrup M, Mehnke F, Pristovsek M, Wernicke T, Kneissl M Journal of Crystal Growth, 355(1), 59, 2012 |