화학공학소재연구정보센터
검색결과 : 131건
No. Article
1 Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE
Dinh DV, Amano H, Pristovsek M
Journal of Crystal Growth, 512, 100, 2019
2 Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN
Mogilatenko A, Knauer A, Zeimer U, Netzel C, Jeschke J, Unger RS, Hartmann C, Wollweber J, Dittmar A, Juda U, Weyers M, Bickermann M
Journal of Crystal Growth, 505, 69, 2019
3 MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire
Dinh DV, Amano H, Pristovsek M
Journal of Crystal Growth, 502, 14, 2018
4 Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si
Dinh DV, Parbrook PJ
Journal of Crystal Growth, 501, 34, 2018
5 High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire
Dinh DV, Hu N, Honda Y, Amano H, Pristovsek M
Journal of Crystal Growth, 498, 377, 2018
6 Silicon doping of semipolar (11(2)over-bar2) AlxGa1-xN (0.50 <= x <= 0.55)
Dinh DV, Pampili P, Parbrook PJ
Journal of Crystal Growth, 451, 181, 2016
7 Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy
Stellmach J, Mehnke F, Frentrup M, Reich C, Schlegel J, Pristovsek M, Wernicke T, Kneissl M
Journal of Crystal Growth, 367, 42, 2013
8 Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE
Nechaev DV, Aseev PA, Jmerik VN, Brunkov PN, Kuznetsova YV, Sitnikova AA, Ratnikov VV, Ivanov SV
Journal of Crystal Growth, 378, 319, 2013
9 Facilitating growth of InAs-InP core-shell nanowires through the introduction of Al
Haapamaki CM, Baugh J, LaPierre RR
Journal of Crystal Growth, 345(1), 11, 2012
10 MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire
Stellmach J, Frentrup M, Mehnke F, Pristovsek M, Wernicke T, Kneissl M
Journal of Crystal Growth, 355(1), 59, 2012