검색결과 : 17건
No. | Article |
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1 |
System-density fluctuations and electro-dissociation of methane clathrate hydrates in externally-applied static electric fields Waldron CJ, English NJ Journal of Chemical Thermodynamics, 117, 68, 2018 |
2 |
Surface and bulk activation of a siliceous bauxite during attrition milling Alex TC, Kumar R International Journal of Mineral Processing, 160, 32, 2017 |
3 |
Effect of prior laser microstructural refinement on the formation of amorphous layer in an Al86Co7.6Ce6.4 alloy Li CL, Murray JW, Voisey KT, Clare AT, McCartney DG Applied Surface Science, 289, 230, 2014 |
4 |
Mechanically induced reactivity of gibbsite: Part 1. Planetary milling Alex TC, Kumar R, Roy SK, Mehrotra SP Powder Technology, 264, 105, 2014 |
5 |
Mechanically induced reactivity of gibbsite: Part 2. Attrition milling Alex TC, Kumar R, Roy SK, Mehrotra SP Powder Technology, 264, 229, 2014 |
6 |
Anomalous reduction in surface area during mechanical activation of boehmite synthesized by thermal decomposition of gibbsite Alex TC, Kumar R, Roy SK, Mehrotra SP Powder Technology, 208(1), 128, 2011 |
7 |
Metrology for Implanted Si Substrate Loss Studies Radisic D, Shamiryan D, Mannaert G, Boullart W, Rosseel E, Bogdanowicz J, Goossens J, Marrant K, Bender H, Sonnemans R, Berry I Journal of the Electrochemical Society, 157(5), H580, 2010 |
8 |
Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing Illgen R, Flachowsky S, Herrmann T, Klix W, Stenzel R, Feudel T, Hontschel J, Horstmann M Journal of Vacuum Science & Technology B, 28(1), C1I12, 2010 |
9 |
Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon Penley C, Stevie FA, Griffis DP, Siebel S, Kulig L, Lee J Journal of Vacuum Science & Technology B, 28(3), 511, 2010 |
10 |
Nanoscratch-induced deformation of single crystal silicon Wu YQ, Huang H, Zou J, Dell JM Journal of Vacuum Science & Technology B, 27(3), 1374, 2009 |