검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors Ramirez-Garcia E, Garduno-Nolasco E, Rodriguez-Mendez LM, Diaz-Albarran LM, Valdez-Perez D, Galaz-Larios MC, Aniel F, Zerounian N, Enciso-Aguilar MA Solid-State Electronics, 153, 1, 2019 |
| 2 |
Determining the base resistance of InP HBTs: An evaluation of methods and structures Nardmann T, Krause J, Pawlak A, Schroter M Solid-State Electronics, 123, 68, 2016 |
| 3 |
Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law Yu D, Lee K, Choi K, Kim B, Zhu H, Vargason K, Kuo JM, Pinsukanjana P, Kao YC Solid-State Electronics, 50(5), 733, 2006 |
| 4 |
Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance Choi K, Yu DY, Lee K, Kim B, Zhu H, Vargason K, Kuo JM, Pinsukanjana P, Kao YC Solid-State Electronics, 50(9-10), 1483, 2006 |
| 5 |
A review of recent progress in the design and reactions of base-resistant fluoroelastomers Schmiegel WW Kautschuk Gummi Kunststoffe, 57(6), 313, 2004 |
| 6 |
On DC modeling of the base resistance in bipolar transistors Linder M, Ingvarson F, Jeppson KO, Grahn JV, Zhang SL, Ostling M Solid-State Electronics, 44(8), 1411, 2000 |