| 1 |
Barrier-free process for fluorinated silicon glass film in Cu interconnects
Cheng YL, Lee CY, Huang WJ, Chen GS, Fang JS
Thin Solid Films, 678, 1, 2019 |
| 2 |
Physico-Chemical Processes Induced by Electrical Breakdown and Discharge Responsible for Memory Effect in Krypton with < 10 ppm Nitrogen
Pejovic MM, Pejovic MM, Stankovic K
Plasma Chemistry and Plasma Processing, 38(2), 415, 2018 |
| 3 |
Comparison of various low dielectric constant materials
Cheng YL, Lee CY, Hung WJ, Chen GS, Fang JS
Thin Solid Films, 660, 871, 2018 |
| 4 |
A study of the chemical breakdown of the anodic oxide formed on (100) oriented silicon in tetramethylammonium hydroxide (TMAH) solutions
Miney PG, Cunnane VJ
Electrochimica Acta, 48(11), 1475, 2003 |
| 5 |
Modeling of time dependence of hole current and prediction of Q(BD) and t(BD) for thin gate MOS devices based upon anode hole injection
Quddus MT, DeMassa TA, Schroder DK, Sanchez JJ
Solid-State Electronics, 45(10), 1773, 2001 |
| 6 |
Surface Recombination of Atoms in a Nitrogen Afterglow
Markovic VL, Petrovic ZL, Pejovic MM
Journal of Chemical Physics, 100(11), 8514, 1994 |
