검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor Choi T, Jung H, Lee CW, Mun KY, Kim SH, Park J, Kim H Applied Surface Science, 343, 128, 2015 |
| 2 |
Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors Xu AH, Qi M, Zhu FY, Sun H, Ai LK Journal of Crystal Growth, 301, 212, 2007 |
| 3 |
MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications Yarekha DA, Godey S, Wallart X, Colder H, Zaknoune M, Mollot F Journal of Crystal Growth, 301, 217, 2007 |
| 4 |
CBr4 and Be heavily doped InGaAs grown in a production MBE system Godey S, Dhellemmes S, Wilk A, Zaknoune M, Mollot F Journal of Crystal Growth, 278(1-4), 600, 2005 |
| 5 |
Effects of carbon tetrabromide flux, substrate temperature and growth rate on carbon-doped GaAs grown by molecular beam epitaxy Zhang R, Yoon SF, Tan KH, Sun ZZ, Huang QF Journal of Crystal Growth, 262(1-4), 113, 2004 |
| 6 |
Surface morphology of heavily carbon-doped GaAs grown by solid source molecular beam epitaxy Tan KH, Yoon SF, Zhang R, Huang QF, Sun ZZ Journal of Crystal Growth, 263(1-4), 105, 2004 |
| 7 |
Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy Zhang R, Yoon SF, Tan KH, Sun ZZ, Huang QF Journal of Crystal Growth, 243(1), 41, 2002 |
| 8 |
Heavily carbon-doped GaAsSb grown on InP for HBT applications Watkins SP, Pitts OJ, Dale C, Xu XG, Dvorak MW, Matine N, Bolognesi CR Journal of Crystal Growth, 221, 59, 2000 |
| 9 |
A study of cylinder design for solid OMVPE sources Timmons M, Rangarajan P, Stennick R Journal of Crystal Growth, 221, 635, 2000 |
| 10 |
Photolytic and photocatalytic decomposition of bromomethanes in irradiated aqueous solutions Calza P, Minero C, Hiskia A, Papacostantinou E, Pelizzetti E Applied Catalysis B: Environmental, 21(3), 191, 1999 |