| 1 |
Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films
Tang CJ, Fernandes AJS, Girao AV, Pereira S, Shi FN, Soares MR, Costa F, Neves AJ, Pinto JL
Journal of Crystal Growth, 389, 83, 2014 |
| 2 |
3D epitaxial growth through holes for the fabrication of thin-film solar cells
Brinkmann N, Pocza D, Mitchell EJ, Reber S
Journal of Crystal Growth, 335(1), 37, 2011 |
| 3 |
Structural and transport properties prepared of nanocrystalline silicon thin films prepared at 54.24 MHz plasma excitation frequency
Chowdhury A, Mukhopadhyay S, Ray S
Journal of Crystal Growth, 304(2), 352, 2007 |
| 4 |
Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo-TiO2-Al stacks
Jogi I, Aarik J, Laan M, Lu J, Kukli K, Kaambre H, Sajavaara T, Uustare T
Thin Solid Films, 510(1-2), 39, 2006 |
| 5 |
Growth of Ge quantum dot mediated by boron on Ge wetting layer
Shi WH, Li CB, Luo LP, Cheng BW, Wang QM
Journal of Crystal Growth, 279(3-4), 329, 2005 |
