| 1 |
Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction
Nemcsics A
Applied Surface Science, 190(1-4), 294, 2002 |
| 2 |
Low-frequency noise characteristics of highly-strained In0.5Ga0.5P/In0.33Ga0.67As pseudomorphic high electron mobility transistor
Kim JH, Song JI
Solid-State Electronics, 45(9), 1571, 2001 |
| 3 |
Larger critical thickness determined by photoluminescence measurements in pseudomorphic In0.25Ga0.75As/Al0.32Ga0.68As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy
Nii K, Kuriyama R, Hiraoka T, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 17(3), 1167, 1999 |
| 4 |
In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si1-xGex on Si(001)
Hiroyama Y, Tamura M
Thin Solid Films, 334(1-2), 1, 1998 |
| 5 |
Defects, Surface Roughening, and Anisotropy on the Tensile InxGa1-xAs/InP(001) System
Dieguez A, Vila A, Cornet A, Clark SA, Westwood DI, Morante JR
Journal of Vacuum Science & Technology B, 15(3), 687, 1997 |
| 6 |
Thermal Relaxation Kinetics of Strained Si/Si1-xGex Heterostructures Determined by Direct Measurement of Mosaicity and Lattice-Parameter Variations
Sardela MR, Hansson GV
Journal of Vacuum Science & Technology A, 13(2), 314, 1995 |
| 7 |
Transmission Electron-Microscopy Study of In0.25Ga0.75As Epilayers Grown on GaAs(001) by Molecular-Beam Epitaxy - The Effect of Epilayer Thickness
Edirisinghe SP, Statonbevan A, Fawcett PN, Joyce BA
Journal of Vacuum Science & Technology B, 13(3), 967, 1995 |
| 8 |
A Photoluminescence Investigation of the Critical Thickness in InGaAs-AlGaAs Pseudomorphic Structures Grown by Molecular-Beam Epitaxy
Yoon SF, Radhakrishnan K, Li HM, Han ZY
Thin Solid Films, 245(1-2), 267, 1994 |
