1 |
Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO2 using the induced and secondary current measurements Said K, Moya G, Ahmed AS, Damamme G, Kallel A Applied Surface Science, 361, 226, 2016 |
2 |
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories Paolucci GM, Bertuccio M, Compagnoni CM, Beltrami S, Spinelli AS, Lacaita AL, Visconti A Solid-State Electronics, 113, 138, 2015 |
3 |
Solution based-spin cast processed organic bistable memory device Ramana CVV, Moodley MK, Kannan V, Maity A Solid-State Electronics, 81, 45, 2013 |
4 |
Polarization temperature effect on liquid-liquid transition and space charge detrapping behavior in atactic polystyrene by thermally stimulated depolarization current Gong LL, Zhang XY, Shi Y, Zhang L Polymer Bulletin, 68(3), 847, 2012 |
5 |
Physical understanding and modeling of SANOS retention in programmed state Furnemont A, Cacciato A, Breuil L, Rosmeulen M, Maes H, De Meyer K, Van Houdt J Solid-State Electronics, 52(4), 577, 2008 |
6 |
Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique Liao JC, Fang YK, Hou YT, Wu WH, Hung CL, Hsu PF, Lin KC, Huang KT, Lee TL, Liang MS Thin Solid Films, 516(12), 4222, 2008 |
7 |
The influence of the ambient gas environment on the non-isothermal dc electric measurements in polymers Marat-Mendes JN, Neagu ER Materials Science Forum, 514-516, 930, 2006 |