| 1 |
Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
Manuel JM, Morales FM, Garcia R, Aidam R, Kirste L, Ambacher O
Journal of Crystal Growth, 357, 35, 2012 |
| 2 |
Vertical dislocations in Ge films selectively grown in submicron Si windows of patterned substrates
Harada S, Kikkawa J, Nakamura Y, Wang G, Caymax M, Sakai A
Thin Solid Films, 520(8), 3245, 2012 |
| 3 |
Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate
Shin HY, Kwon SK, Chang YI, Cho MJ, Park KH
Journal of Crystal Growth, 311(17), 4167, 2009 |
| 4 |
Characterization of Planar Defects in Annealed SiGe/Si Heterostructure
Lim YS, Seo WS
Korean Journal of Materials Research, 19(12), 699, 2009 |
| 5 |
Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping process
Ii S, Takaki Y, Ikeda K, Nakashima H, Nakashima H
Thin Solid Films, 517(1), 38, 2008 |
| 6 |
Role of interfaces in duplex stainless steel deformation micromechanisms
Taisne A, Decamps B, Priester L
Composite Interfaces, 13(1), 89, 2006 |
| 7 |
Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates
Zhou W, Ren DW, Dapkus PD
Journal of Crystal Growth, 290(1), 11, 2006 |
| 8 |
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
Hu GQ, Kong X, Wan L, Wang YQ, Duan XF, Lu Y, Liu XL
Journal of Crystal Growth, 256(3-4), 416, 2003 |
| 9 |
Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry
Hong SK, Ko HJ, Chen YF, Yao T
Journal of Crystal Growth, 209(2-3), 537, 2000 |
