| 1 |
The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon
Saleh R, Nickel NH
Applied Surface Science, 254(11), 3324, 2008 |
| 2 |
Effects of doping on structural change and hydrogen bonding in laser crystallized polycrystalline silicon films
Saleh R, Nickel NH
Thin Solid Films, 515(7-8), 3847, 2007 |
| 3 |
Laser Single-Photon Ionization Mass-Spectrometry Measurements of Sicl and Sicl2 During Thermal Etching of Si(100)
Materer N, Goodman RS, Leone SR
Journal of Vacuum Science & Technology A, 15(4), 2134, 1997 |
| 4 |
Adsorption and Dissociation of Phosphine on Si(001)
Shan J, Wang YJ, Hamers RJ
Journal of Physical Chemistry, 100(12), 4961, 1996 |
| 5 |
High Phosphorus Doping of Epitaxial Silicon at Low-Temperature and Very-Low Pressure
Huang XD, Han P, Chen H, Zheng YD, Hu LQ, Wang RH, Zhu SM, Feng D
Journal of Vacuum Science & Technology B, 14(4), 2690, 1996 |
| 6 |
Boron Incorporation in Epitaxial Silicon Using Si2H6 and B2H6 in an Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition Reactor
Sanganeria MK, Violette KE, Ozturk MC, Harris G, Maher DM
Journal of the Electrochemical Society, 142(1), 285, 1995 |
| 7 |
Mechanisms of Halogen Chemisorption upon a Semiconductor Surface - I-2, Br-2, Cl-2, and C6H5Cl Chemisorption upon the Si(100) (2X1) Surface
Flaum HC, Sullivan DJ, Kummel AC
Journal of Physical Chemistry, 98(6), 1719, 1994 |
| 8 |
An Atomically Resolved STM Study of the Interaction of Phosphine with the Silicon(001) Surface
Wang YJ, Bronikowski MJ, Hamers RJ
Journal of Physical Chemistry, 98(23), 5966, 1994 |
