검색결과 : 15건
No. | Article |
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1 |
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices Anderson TJ, Gallagher JC, Luna LE, Koehler AD, Jacobs AG, Xie J, Beam E, Hobart KD, Feigelson BN Journal of Crystal Growth, 499, 35, 2018 |
2 |
Competitive ion-exchange of manganese and gadolinium in titanate nanotubes Szirmai P, Stevens J, Horvath E, Ciric L, Kollar M, Forro L, Nafradi B Catalysis Today, 284, 146, 2017 |
3 |
The description of charge transfer in fast negative ions scattering on water covered Si(100) surfaces Chen L, Qiu SL, Liu PY, Xiong FF, Lu JJ, Liu YF, Li GP, Liu YR, Ren F, Xiao YQ, Gao L, Zhao QS, Ding B, Li Y, Guo YL, Chen XM Applied Surface Science, 387, 1174, 2016 |
4 |
The effect of Co ion implantation on Ge1-xMnx films Gao WX, Wang L, Hou DL, Hu YC, Zhang Q, Ma L, Zhen CM Applied Surface Science, 257(21), 8871, 2011 |
5 |
Influence of hydrogen-doped MgO thin films on the discharge characteristics in plasma display panels Lee GS, Lee JY, Cheon YB, Kim KB, Kim JJ, Sohn SH Thin Solid Films, 519(10), 3037, 2011 |
6 |
Implantation defects and n-type doping in Ge and Ge rich SiGe Peaker AR, Markevich VP, Hamilton B, Hawkins ID, Slotte J, Kuitunen K, Tuomisto F, Satta A, Simoen E, Abrosimov NV Thin Solid Films, 517(1), 152, 2008 |
7 |
Influence of the size of doping ion on phase stability and oxygen permeability of SrCo0.8Fe0.2O3-delta oxide Tan L, Yang L, Gu XH, Jin WQ, Zhang LX, Xu NP Journal of Membrane Science, 230(1-2), 21, 2004 |
8 |
Sensitivity of positron annihilation spectroscopy to energy contamination in low energy boron ion implantation Knights AP, Coleman PG Materials Science Forum, 445-6, 123, 2004 |
9 |
Effect of Cl ion implantation on electrical properties of CuInSe2 thin films Tanaka T, Yamaguchi T, Ohshima T, Itoh H, Wakahara A, Yoshida A Solar Energy Materials and Solar Cells, 75(1-2), 109, 2003 |
10 |
Codoping of 4H-SiC with N- and P-donors by ion implantation Laube M, Schmid F, Pensl G, Wagner G Materials Science Forum, 389-3, 791, 2002 |