| 1 |
Properties of materials for resistive RAM based on HfO2(first principles calculations)
Balabai RM, Zalevskyi DV
Molecular Crystals and Liquid Crystals, 700(1), 95, 2020 |
| 2 |
Properties of materials for resistive RAM based on HfO2(first principles calculations)
Balabai RM, Zalevskyi DV
Molecular Crystals and Liquid Crystals, 700(1), 95, 2020 |
| 3 |
Building MoS2/S-doped g-C3N4 layered heterojunction electrocatalysts for efficient hydrogen evolution reaction
Geng S, Yang WW, Yu YS
Journal of Catalysis, 375, 441, 2019 |
| 4 |
Solid strong base K-Pt/NaY zeolite nano-catalytic system for completed elimination of formaldehyde at room temperature
Song SQ, Wu X, Lu CH, Wen MC, Le ZG, Jiang SJ
Applied Surface Science, 442, 195, 2018 |
| 5 |
Enhanced visible-light photocatalytic nitrogen fixation over semicrystalline graphitic carbon nitride: Oxygen and sulfur co-doping for crystal and electronic structure modulation
Feng XW, Chen H, Jiang F, Wang X
Journal of Colloid and Interface Science, 509, 298, 2018 |
| 6 |
Hydrogen migration and hydrogen-dislocation interaction in austenitic steels and titanium alloy in relation to hydrogen embrittlement
Teus SM, Savvakin DG, Ivasishin OM, Gavriljuk VG
International Journal of Hydrogen Energy, 42(4), 2424, 2017 |
| 7 |
Study on the electron structure and optical properties of Ga0.5Al0.5As(100) beta(2)(2 x 4) reconstruction surface
Yu XH, Du YJ, Chang BK, Ge ZH, Wang HG, Wang MS
Applied Surface Science, 266, 380, 2013 |
| 8 |
Investigations of nanoreactors on the basis of p-type porous silicon: Electron structure and phase composition
Lenshin AS, Kashkarov VM, Spivak YM, Moshnikov VA
Materials Chemistry and Physics, 135(2-3), 293, 2012 |
| 9 |
Effect of the W addition content on valence electron structure and properties of MoSi2-based solid solution alloys
Peng K, Yi MZ, Ran LP, Ge YC
Materials Chemistry and Physics, 129(3), 990, 2011 |
| 10 |
Calculation of the surface energy of fcc-metals with the empirical electron surface model
Fu BQ, Liu W, Li ZL
Applied Surface Science, 256(22), 6899, 2010 |
