화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures
Shin DO, Sardela MR, Ban SH, Lee NE, Shim KH
Applied Surface Science, 237(1-4), 139, 2004
2 Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer
Shin DO, Ban SH, Ahn YS, Lee YS, Lee NE, Shim KH
Thin Solid Films, 458(1-2), 269, 2004