| 1 |
Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer
Liao PY, Chang TC, Hsieh TY, Tsai MY, Chen BW, Chu AK, Chou CH, Chang JF
Thin Solid Films, 603, 359, 2016 |
| 2 |
Nanoscale CMOSFET performance improvement and reliability study for local strain techniques
Huang HL, Chen JK, Houng MP
Solid-State Electronics, 79, 31, 2013 |
| 3 |
Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths
Hsu HW, Lin KC, Lee CC, Twu MJ, Huang HS, Chen SY, Peng MR, Teng HH, Liu CH
Thin Solid Films, 544, 120, 2013 |
| 4 |
The effects of UV radiation on SiC(O)N/SiOC(-H) thin films grown on Si substrates using plasma-enhanced atomic layer deposition
Navamathavan R, Kim CY, Lee HJ, Yu Y, Choi CK
Thin Solid Films, 547, 151, 2013 |
| 5 |
Buried-Pt gate InP/In0.52Al0.48As/In0.7Ga0.3As pseudomorphic HEMTs
Shin SH, Kim TW, Song JI, Jang JH
Solid-State Electronics, 62(1), 106, 2011 |
| 6 |
High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs
LukyanchikovA N, Garbar N, Kudina V, Smolanka A, Lokshin M, Simoen E, Claeys C
Solid-State Electronics, 52(5), 801, 2008 |
| 7 |
Impact strain engineering on gate stack quality and reliability
Claeys C, Simoen E, Put S, Giusi G, Crupi F
Solid-State Electronics, 52(8), 1115, 2008 |
| 8 |
Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application
Hsieh YC, Chang EY, Yeh SS, Chang CW, Luo GL, Chang CY, Lee CT
Journal of Crystal Growth, 289(1), 96, 2006 |
