1 |
Induction of tin pest for cleaning tin-drop contaminated optics Bowering N Materials Chemistry and Physics, 198, 236, 2017 |
2 |
Mechanismand model of atomic hydrogen cleaning for different types of carbon contamination on extreme ultraviolet multilayers Song Y, Lu QP, Gong XP Thin Solid Films, 612, 96, 2016 |
3 |
Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning Ashby PD, Olynick DL, Ogletree DF, Naulleau PP Advanced Materials, 27(38), 5813, 2015 |
4 |
Transportation of hydrogen radicals for cleaning extreme ultraviolet lithography optics Kuroki Y, Funakoshi N, Nishiyama I, Izumi A Thin Solid Films, 575, 110, 2015 |
5 |
Mitigation of ion and particulate emission from laser-produced plasmas used for extreme ultraviolet lithography Di Lazzaro P, Bollanti S, Flora F, Mezi L, Murra D, Torre A Applied Surface Science, 272, 13, 2013 |
6 |
Full 3D Monte Carlo simulation of pit-type defect evolution during extreme ultraviolet lithography multilayer deposition Spivey RF, Teki R, Lu TM Thin Solid Films, 540, 173, 2013 |
7 |
Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP) Jung HY, Park YR, Lee HJ, Lee NE, Jeong CY, Ahn J Thin Solid Films, 517(14), 3938, 2009 |
8 |
Surface phenomena related to mirror degradation in extreme ultraviolet (EUV) lithography Madey TE, Faradzhev NS, Yakshinskiy BV, Edwards NV Applied Surface Science, 253(4), 1691, 2006 |
9 |
Etching characteristics of Ta and TaN usingCl(2)/Ar inductively coupled plasma Shin MH, Na SW, Lee NE, Ahn JH Thin Solid Films, 506, 230, 2006 |
10 |
Stress, microstructure, and stability of Mo/Si, W/Si, and Mo/C multilayer films Windt DL Journal of Vacuum Science & Technology A, 18(3), 980, 2000 |