| 1 |
Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy
Huang WG, Gu Y, Chen XY, Zhang J, Gong Q, Huang H, Ma YJ, Zhang YG
Journal of Crystal Growth, 512, 61, 2019 |
| 2 |
Molecular beam epitaxy growth of GaN films on a tungsten carbide/Si template
Cho S, Choi S, Cho Y, Lee S, Lee M, Chang J
Thin Solid Films, 649, 232, 2018 |
| 3 |
Interface roughness scattering in InGaAs/InAlAs double quantum wells grown on (100) and (411)A InP substrates at different growth temperatures
Alcer D, Semtsiv MP, Masselink WT
Journal of Crystal Growth, 477, 110, 2017 |
| 4 |
InGaAsBi materials grown by gas source molecular beam epitaxy
Ai LK, Zhou SX, Qi M, Xu AH, Wang SM
Journal of Crystal Growth, 477, 135, 2017 |
| 5 |
Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux
Lee JH, Ryu H, Ahn SJ, Noh YK, Oh JE, Kim YH
Current Applied Physics, 15(3), 232, 2015 |
| 6 |
InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
Teng T, Xu AH, Ai LK, Sun H, Qi M
Journal of Crystal Growth, 378, 618, 2013 |
| 7 |
Quantum dot lasers grown by gas source molecular-beam epitaxy
Gong Q, Chen P, Li SG, Lao YF, Cao CF, Xu CF, Zhang YG, Feng SL, Ma CH, Wang HL
Journal of Crystal Growth, 323(1), 450, 2011 |
| 8 |
InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
Teng T, Ai LK, Xu AH, Sun H, Zhu FY, Qi M
Journal of Crystal Growth, 323(1), 525, 2011 |
| 9 |
Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology
Bantaculo R, Saitoh E, Miyamoto Y, Handa H, Suemitsu M
Thin Solid Films, 520(2), 730, 2011 |
| 10 |
In As/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy
Yang HD, Gong Q, Li SG, Cao CF, Xu CF, Chen P, Feng SL
Journal of Crystal Growth, 312(23), 3451, 2010 |
