검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Group IV transition metal based phospho-chalcogenides@MoTe2 for electrochemical hydrogen evolution reaction over wide range of pH Karfa P, Majhi KC, Madhuri R International Journal of Hydrogen Energy, 44(45), 24628, 2019 |
| 2 |
Formation of extended thermal etch pits on annealed Ge wafers Persichetti L, Fanfoni M, De Seta M, Di Gaspare L, Ottaviano L, Goletti C, Sgarlata A Applied Surface Science, 462, 86, 2018 |
| 3 |
Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition Wang BG, Fang ZQ, Claflin B, Look D, Kouvetakis J, Yeo YK Thin Solid Films, 654, 77, 2018 |
| 4 |
Dislocation density and strain-relaxation in Ge1-xSnx layers grown on Ge/Si (001) by low-temperature molecular beam epitaxy Khiangte KR, Rathore JS, Sharma V, Bhunia S, Das S, Fandan RS, Pokharia RS, Laha A, Mahapatra S Journal of Crystal Growth, 470, 135, 2017 |
| 5 |
Recent development in 2D materials beyond graphene Gupta A, Sakthivel T, Seal S PROGRESS IN MATERIALS SCIENCE, 73, 44, 2015 |
| 6 |
Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture Chan TK, Koh SY, Fang V, Markwitz A, Osipowicz T Applied Surface Science, 314, 322, 2014 |
| 7 |
SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications Wirths S, Buca D, Ikonic Z, Harrison P, Tiedemann AT, Hollander B, Stoica T, Mussler G, Breuer U, Hartmann JM, Grutzmacher D, Mantl S Thin Solid Films, 557, 183, 2014 |
| 8 |
The SiGeSn approach towards Si-based lasers Sun G, Yu SQ Solid-State Electronics, 83, 76, 2013 |
| 9 |
Tuning of CeO2 buffer layers for coated superconductors through doping Vanpoucke DEP, Cottenier S, Van Speybroeck V, Bultinck P, Van Driessche I Applied Surface Science, 260, 32, 2012 |
| 10 |
Fabrication of high-Ge-fraction strained Si1-xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers Takahashi K, Sakuraba M, Murota J Solid-State Electronics, 60(1), 112, 2011 |