검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors Patrashin M, Akahane K, Sekine N, Hosako I Journal of Crystal Growth, 477, 86, 2017 |
| 2 |
Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials Wang CA, Goyal A, Huang R, Donnelly J, Calawa D, Turner G, Sanchez-Rubio A, Hsu A, Hu Q, Williams B Journal of Crystal Growth, 312(8), 1157, 2010 |
| 3 |
OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasers Wang CA, Huang RK, Goyal A, Donnelly JR, Calawa DR, Cann SG, O'Donnell F, Plant JJ, Missaggia LJ, Turner GW, Sanchez-Rubio A Journal of Crystal Growth, 310(23), 5191, 2008 |
| 4 |
Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE Yasuhara N, Jo M, Sugawara Y, Kawamoto K, Fukatsu S Journal of Crystal Growth, 301, 718, 2007 |
| 5 |
The opportunities, successes and challenges for GaInNAsSb Harris JS Journal of Crystal Growth, 278(1-4), 3, 2005 |