검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
HVPE of AlxGa1-xN layers on planar and trench patterned sapphire Hagedorn S, Richter E, Zeimer U, Prasai D, John W, Weyers M Journal of Crystal Growth, 353(1), 129, 2012 |
| 2 |
Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates Hemmingsson C, Boota M, Rahmatalla RO, Junaid M, Pozina G, Birch J, Monemar B Journal of Crystal Growth, 311(2), 292, 2009 |
| 3 |
CFD optimisation of up-flow vertical HVPE reactor for GaN growth Sytniewski LJ, Lapkin AA, Stepanov S, Wang WN Journal of Crystal Growth, 310(14), 3358, 2008 |
| 4 |
Influence of In on the surface morphology of HYPE grown GaN Dam CEC, Hageman PR, van Enckevort WJP, Bohnen T, Larsen PK Journal of Crystal Growth, 307(1), 19, 2007 |
| 5 |
The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations Dam CEC, Grzegorczyk AP, Hageman PR, Dorsman R, Kleijn CR, Larsen PK Journal of Crystal Growth, 271(1-2), 192, 2004 |
| 6 |
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces Pimpinelli A, Cadoret R, Gil-Lafon E, Napierala J, Trassoudaine A Journal of Crystal Growth, 258(1-2), 1, 2003 |
| 7 |
Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy Gil-Lafon E, Napierala J, Pimpinelli A, Cadoret R, Trassoudaine A, Castelluci D Journal of Crystal Growth, 258(1-2), 14, 2003 |
| 8 |
Crystallographic orientation dependence of impurity incorporation during epitaxial lateral overgrowth of InP Sun YT, Anand S, Lourdudoss S Journal of Crystal Growth, 237, 1418, 2002 |
| 9 |
Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy Aujol E, Trassoudaine A, Siozade L, Pimpinelli A, Cadoret R Journal of Crystal Growth, 230(3-4), 372, 2001 |