| 1 |
Effects of furnace pressure on oxygen and carbon coupled transport in an industrial directional solidification furnace for crystalline silicon ingots
Qi XF, Liu LJ, Ma WC
Journal of Crystal Growth, 468, 933, 2017 |
| 2 |
Antimony segregation and n-type doping in Si/Si(111) films grown by molecular beam epitaxy
Yurasov DV, Drozdov MN, Schmagin VB, Yunin PA, Novikov AV
Journal of Crystal Growth, 475, 291, 2017 |
| 3 |
Origin and effective reduction of inversion domains in aluminum nitride grown by a sublimation method
Shigetoh K, Horibuchi K, Nakamura D
Journal of Crystal Growth, 478, 33, 2017 |
| 4 |
Coincident site lattice bi-crystals growth-Impurity segregation towards grain boundaries
Autruffe A, Arnberg L, Di Sabatino M, Vines L
Journal of Crystal Growth, 416, 8, 2015 |
| 5 |
Silicon samples grown under reduced melt convection
Binetti S, Gonik M, Le Donne A, Croel A
Journal of Crystal Growth, 417, 9, 2015 |
| 6 |
Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth
Autruffe A, Vines L, Arnberg L, Di Sabatino M
Journal of Crystal Growth, 372, 180, 2013 |
| 7 |
Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method
Zayachuk DM, Ilyina OS, Pashuk AV, Mikityuk VI, Shlemkevych VV, Csik A, Kaczorowski D
Journal of Crystal Growth, 376, 28, 2013 |
| 8 |
Influence of incorporated non-metallic impurities on electromigration in copper damascene interconnect lines
Stangl M, Liptak M, Acker J, Hoffmann V, Baunack S, Wetzig K
Thin Solid Films, 517(8), 2687, 2009 |
| 9 |
Concentration distribution of Yb2+ and Yb3+ ions in YbF3 : CaF2 crystals
Nicoara I, Pecingina-Garjoaba N, Bunoiu O
Journal of Crystal Growth, 310(7-9), 1476, 2008 |
| 10 |
Impurity gettering effect of Te inclusions in CdZnTe single crystals
Yang G, Bolotnikov AE, Cui Y, Camarda GS, Hossain A, James RB
Journal of Crystal Growth, 311(1), 99, 2008 |
