| 1 |
Evaluation of sputtering induced surface roughness development of Ni/Cu multilayers thin films by Time-of-Flight Secondary Ion Mass Spectrometry depth profiling with different energies O-2(+) ion bombardment
Yan XL, Duvenhage MM, Wang JY, Swart HC, Terblans JJ
Thin Solid Films, 669, 188, 2019 |
| 2 |
Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry
Drozdov MN, Drozdov YN, Csik A, Novikov AV, Vad K, Yunin PA, Yurasov DV, Belykh SF, Gololobov GP, Suvorov DV, Tolstogouzov A
Thin Solid Films, 607, 25, 2016 |
| 3 |
Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source
Ravanel X, Trouiller C, Juhel M, Wyon C, Kwakman LFT, Leonard D
Applied Surface Science, 255(4), 1440, 2008 |
| 4 |
Controlled variation of the information depth by angle dependent soft X-ray emission spectroscopy: A study on polycrystalline Cu(In,Ga)Se-2
Monig H, Lauermann I, Grimm A, Camus C, Kaufmann CA, Pistor P, Jung C, Kropp T, Lux-Steiner MC, Fischer CH
Applied Surface Science, 255(5), 2474, 2008 |
| 5 |
An X-ray diffraction method to determine stress at constant penetration/information depth
Kumar A, Welzel U, Wohlschlogel M, Baumann W, Mittemeijer EJ
Materials Science Forum, 524-525, 13, 2006 |
| 6 |
Mechanical stress gradients in thin films analyzed employing X-ray diffraction measurements at constant penetration/information depths
Wohlschlogel M, Baumann W, Welzel U, Mittemeijer EJ
Materials Science Forum, 524-525, 19, 2006 |
| 7 |
TOF-SIMS measurement of ultra-thin SiO2 films prepared by the graded-etching method
Shibamori T, Muraji Y, Man N, Karen A
Applied Surface Science, 203, 449, 2003 |
| 8 |
Estimation of ToF-SIMS information depth in micro-corrosion analysis
Abe Y, Komatsu M, Okuhira H
Applied Surface Science, 203, 859, 2003 |
| 9 |
A new approach to evaluate steep stress gradients principally using layer removal
Hauk V, Kruger B
Materials Science Forum, 347-3, 80, 2000 |
