| 1 |
Voltage dependence of two-step photocurrent generation in quantum dot intermediate band solar cells
Elborg M, Noda T, Mano T, Jo M, Sakuma Y, Sakoda K, Han LY
Solar Energy Materials and Solar Cells, 134, 108, 2015 |
| 2 |
Realistic Detailed Balance Study of the Quantum Effi ciency of Quantum Dot Solar Cells
Mellor A, Luque A, Tobias I, Marti A
Advanced Functional Materials, 24(3), 339, 2014 |
| 3 |
Laser field effect on the nonlinear optical properties of a square quantum well under the applied electric field
Karabulut I
Applied Surface Science, 256(24), 7570, 2010 |
| 4 |
Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier layer composition
Nagase M, Mozume T, Simoyama T, Hasama T, Ishikawa H
Journal of Crystal Growth, 301, 240, 2007 |
| 5 |
Infrared absorption and current-voltage characteristic of GaAs/AlGaAs multiple quantum wells on GaAs (111)A substrate grown by solid source molecular beam epitaxy
Li H, Mei T, Zhang DH, Fan WJ, Yoon SF, Loke WK
Journal of Crystal Growth, 288(1), 36, 2006 |
| 6 |
Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers
Kasai J, Mozume T
Journal of Crystal Growth, 278(1-4), 183, 2005 |
| 7 |
Fabrication and characterization of short period AIN/GaN quantum cascade laser structures
Inoue Y, Nagasawa H, Sone N, Ishino K, Ishida A, Fujiyasu H, Kim JJ, Makino H, Yao T, Sakakibara S, Kuwabara M
Journal of Crystal Growth, 265(1-2), 65, 2004 |
| 8 |
MOCVD growth of InGaAsP/InGaAs multi-step-quantum well structure for QWIP application by using TBA and TBP in N-2 ambient
Zhao JH, Tang XH, Mei T, Zhang BL, Huang GS
Journal of Crystal Growth, 268(3-4), 432, 2004 |
| 9 |
Extended eigenfunctions in asymmetric double triangular quantum wells in weak electric fields
Santiago RB, Guimaraes LG
Solid-State Electronics, 46(1), 89, 2002 |
| 10 |
Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure
Chen CC, Hsieh KL, Chi GC, Chuo CC, Chyi JI, Chang CA
Solid-State Electronics, 46(8), 1123, 2002 |
