검색결과 : 8건
No. | Article |
---|---|
1 |
Comparative analysis of lambda approximate to 9 mu m GaAs/AlGaAs quantum cascade lasers with different injector doping Indjin D, Hofling S, Mircetic A, Jovanovic VD, Radovanovic J, Ikonic Z, Vukmirovic N, Harrison P, Milanovic V, Reithmaier JP, Forchel A Materials Science Forum, 518, 29, 2006 |
2 |
Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications Liu XY, Falth JF, Andersson TG, Holmstrom P, Janes P, Ekenberg U, Thylen L Journal of Crystal Growth, 278(1-4), 397, 2005 |
3 |
Control of optical gain in the active region of quantum cascade laser by strong perpendicular magnetic field Radovanovic J, Milanovic V, Ikonic Z, Indjin D Materials Science Forum, 494, 31, 2005 |
4 |
Towards SiGe terahertz VCSELs Kelsall RW, Ikonic Z, Harrison P, Paul DJ, Lynch SA, Bates R, Norris DJ, Liew SL, Cullis AG, Arnone DD, Pidgeon CR, Murzyn P, Robbins DJ, Soref RA Materials Science Forum, 453-454, 1, 2004 |
5 |
Optimization of intersubband optical nonlinearities in continually graded AlGaN quantum well structures Radovanovic J, Milanovic V, Ikonic Z, Indjin D Materials Science Forum, 453-454, 21, 2004 |
6 |
Intraband transitions in GaN/AlN quantum wells grown on sapphire (0001) and 6H-SiC substrates Helman A, Tchernycheva M, Moumanis K, Lusson A Materials Science Forum, 457-460, 1589, 2004 |
7 |
Global optimization of semiconductor quantum well profile: Maximizing the nonlinear electro-optical coefficients Radovanovic J, Milanovic V, Ikonic Z, Indjin D Materials Science Forum, 413, 21, 2003 |
8 |
Injection lasers based on intraband carrier transitions Towe E, Pal D, Vorobjev LE, Glukhovskoy AV, Danilov SN, Zerova VL, Panevin VY, Firsuv DA, Shalygin VA, Zegrya GG, Weber A, Grundmann M Materials Science Forum, 384-3, 209, 2002 |