화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 The impact of surface oxidation on energy spectra of keV ions scattered from transition metals
Bruckner B, Bauer P, Primetzhofer D
Applied Surface Science, 479, 1287, 2019
2 Double matrix effect in Low Energy Ion Scattering from La surfaces
Zameshin AA, Yakshin AE, Sturm JM, Brongerma HH, Bijkerk F
Applied Surface Science, 440, 570, 2018
3 An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
Ghumman CAA, Moutinho AMC, Santos A, Teodoro OMND, Tolstogouzov A
Applied Surface Science, 258(7), 2490, 2012
4 Functionality of novel black silicon based nanostructured surfaces studied by TOF SIMS
Talian I, Aranyosiova M, Orinak A, Velic D, Hasko D, Kaniansky D, Orinakova R, Hubner J
Applied Surface Science, 256(7), 2147, 2010
5 Probability of ionization of sputtered particles as a function of their energy - Part I: Negative Si- ions
Kudriavtsev Y, Villegas A, Gallardo S, Asomoza R
Applied Surface Science, 254(7), 2059, 2008
6 Cesium ion sputtering with oxygen flooding: Experimental SIMS study of work function change
Kudriatsev Y, Villegas A, Gallardo S, Ramirez G, Asomoza R, Mishurnuy V
Applied Surface Science, 254(16), 4961, 2008
7 Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method
Dubois C, Prudon G, Gautier B, Dupuy JC
Applied Surface Science, 255(4), 1377, 2008
8 Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source
Ravanel X, Trouiller C, Juhel M, Wyon C, Kwakman LFT, Leonard D
Applied Surface Science, 255(4), 1440, 2008
9 Development of a high lateral resolution TOF-SIMS apparatus for single particle analysis
Sakamoto T, Koizumi M, Kawasaki J, Yamaguchi J
Applied Surface Science, 255(4), 1617, 2008
10 Quantitative fundamental SIMS studies using O-18 implant standards
Williams P, Sobers RC, Franzreb K, Lorincik J
Applied Surface Science, 252(19), 6429, 2006