검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Effect of thermal annealing on GaN pn-junction diode with Pt/Ag as ohmic contact Yusoff MZM, Baharin A, Hassan Z, Ahmed NM, Abu Hassan H, Abdullah MJ Composite Interfaces, 21(5), 371, 2014 |
| 2 |
Room temperature analysis of Ge p(+)/n diodes reverse characteristics fabricated by platinum assisted dopant activation Ioannou-Sougleridis V, Poulakis N, Dimitrakis P, Normand P, Patsis GP, Dimoulas A, Simoen E Solid-State Electronics, 81, 19, 2013 |
| 3 |
Organic thin-film diodes with internal charge separation zone Terai M, Kumaki D, Yasuda T, Fujita K, Tsutsui T Current Applied Physics, 5(4), 341, 2005 |
| 4 |
Characteristics of trench-refilled 4H-SiC p-n junction diodes fabricated by selective epitaxial growth Li C, Losee P, Seiler J, Bhat I, Chow TP Materials Science Forum, 483, 159, 2005 |
| 5 |
Steady-state and transient characteristics of high-voltage 4H-SiC junction diodes Ivanov PA, Levinshtein ME, Mnatsakanov TT, Palmour JW, Singh R, Irvin KG, Das M Materials Science Forum, 483, 973, 2005 |
| 6 |
Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation Dutto C, Fogarassy E, Mathiot D, Muller D, Kern P, Ballutaud D Applied Surface Science, 208, 292, 2003 |
| 7 |
Studies of 6H-SiC devices Wang SR, Liu ZL Current Applied Physics, 2(5), 393, 2002 |
| 8 |
Reverse current recovery in 4H-SiC diodes with n- and p-base Ivanov PA, Grekhov IV, Konstantinov AO, Samsonova TP Materials Science Forum, 433-4, 855, 2002 |
| 9 |
Noise as a diagnostic tool for semiconductor material and device characterization Claeys C, Simoen E Journal of the Electrochemical Society, 145(6), 2058, 1998 |
| 10 |
Classification of the Pore Structure of N-Type Silicon and Its Microstructure Osaka T, Ogasawara K, Nakahara S Journal of the Electrochemical Society, 144(9), 3226, 1997 |