화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Fabrication of lateral lattice-polarity-inverted GaN heterostructure
Katayama R, Kuge Y, Kondo T, Onabe K
Journal of Crystal Growth, 301, 447, 2007
2 Polarity control in MBE growth of III-nitrides, and its device application
Okumura H, Shimizu M, Shen XQ, Ide T
Current Applied Physics, 2(4), 305, 2002
3 Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy
Xue QK, Xue QZ, Kuwano S, Sakurai T, Ohno T, Tsong IST, Qiu XG, Segawa Y
Thin Solid Films, 367(1-2), 149, 2000
4 Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures
Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Smart J, Shealy JR, Eastman LF, Eustis TJ
Journal of Vacuum Science & Technology B, 17(3), 1252, 1999