화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Silicon epitaxy epitaxy on H-terminated Si (100) surfaces at 250 degrees C
Deng X, Namboodiri P, Li K, Wang XQ, Stan G, Myers AF, Cheng XB, Li TB, Silver RM
Applied Surface Science, 378, 301, 2016
2 Moisture requirements to reduce interfacial sub-oxides and lower hydrogen pre-bake temperatures for RPCVD Si epitaxy
Brabant PD, Shinriki M, Vininski J, Raynor MW, Torres R, Francis TA
Journal of Crystal Growth, 381, 33, 2013
3 Fabrication and characterization of strained Si1-yCy n-MOSFETs grown by Hot Wire Cell method
Ishihara H, Watahiki T, Yamada A, Konagai M
Thin Solid Films, 508(1-2), 329, 2006
4 Low temperature epitaxial growth of Si and Si1-yCy films by hot wire cell method
Watahiki T, Abe K, Tamura H, Miyajima S, Yamada A, Konagai M
Thin Solid Films, 395(1-2), 221, 2001
5 Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition
Kitagawa T, Kondo M, Matsuda A
Applied Surface Science, 159, 30, 2000
6 New approach to low-temperature Si epitaxy by using hot wire cell method
Watahiki T, Yamada A, Konagai M
Journal of Crystal Growth, 209(2-3), 335, 2000