검색결과 : 6건
No. | Article |
---|---|
1 |
Silicon epitaxy epitaxy on H-terminated Si (100) surfaces at 250 degrees C Deng X, Namboodiri P, Li K, Wang XQ, Stan G, Myers AF, Cheng XB, Li TB, Silver RM Applied Surface Science, 378, 301, 2016 |
2 |
Moisture requirements to reduce interfacial sub-oxides and lower hydrogen pre-bake temperatures for RPCVD Si epitaxy Brabant PD, Shinriki M, Vininski J, Raynor MW, Torres R, Francis TA Journal of Crystal Growth, 381, 33, 2013 |
3 |
Fabrication and characterization of strained Si1-yCy n-MOSFETs grown by Hot Wire Cell method Ishihara H, Watahiki T, Yamada A, Konagai M Thin Solid Films, 508(1-2), 329, 2006 |
4 |
Low temperature epitaxial growth of Si and Si1-yCy films by hot wire cell method Watahiki T, Abe K, Tamura H, Miyajima S, Yamada A, Konagai M Thin Solid Films, 395(1-2), 221, 2001 |
5 |
Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition Kitagawa T, Kondo M, Matsuda A Applied Surface Science, 159, 30, 2000 |
6 |
New approach to low-temperature Si epitaxy by using hot wire cell method Watahiki T, Yamada A, Konagai M Journal of Crystal Growth, 209(2-3), 335, 2000 |