| 1 |
Temperature dependence of magnetic properties on switching energy in magnetic tunnel junction devices with tilted magnetization
Teso B, Kravenkit S, Sorn-in K, Kaewrawang A, Kruesubthaworn A, Siritaratiwat A, Mewes T, Mewes CKA, Surawanitkun C
Applied Surface Science, 472, 36, 2019 |
| 2 |
Half-metallicity and spin transport studies on quaternary CoCuMnSb Heusler alloy
Huang YS, Jing C, Wu YN, Zhang YL, Li Z, Sun XD, Ye MF
Current Applied Physics, 19(11), 1211, 2019 |
| 3 |
Reconfigurable logic for carry-out computing in 1-bit full adder using a single magnetic tunnel junction
Bae GY, Hwang Y, Lee S, Kim T, Park W
Solid-State Electronics, 154, 16, 2019 |
| 4 |
First principle study on TMR effect in A-MgO-A (A = Fe, Co and Ni) magnetic tunnel junction
Aadhityan A, Kala CP, Thiruvadigal DJ
Applied Surface Science, 449, 799, 2018 |
| 5 |
Superparamagnetic ground state of CoFeB/MgO magnetic tunnel junction with dual-barrier
Tran TN, Lam TN, Yang CY, Lin WC, Chen PW, Tseng YC
Applied Surface Science, 457, 529, 2018 |
| 6 |
Optimization of the buffer surface of CoFeB/MgO/CoFeB-based magnetic tunnel junctions by ion beam milling
Martins L, Ventura J, Ferreira R, Freitas PP
Applied Surface Science, 424, 58, 2017 |
| 7 |
Enhanced tunnel magnetoresistance and electric-field effect in CoFeB/MgO/CoFeB perpendicular tunnel junctions with W underlayer
Kim DH, Park KW, Park BG
Current Applied Physics, 17(7), 962, 2017 |
| 8 |
Etch characteristics of Ru thin films using O-2/Ar, CH4/Ar, and O-2/CH4/Ar plasmas
Hwang SM, Garay AA, Choi JH, Chung CW
Thin Solid Films, 615, 311, 2016 |
| 9 |
Crystallization characteristics of a middle CoFeB layer in a double MgO barrier magnetic tunnel junction
Lee S, Kim K, Hwang I, Cho BK
Current Applied Physics, 15(1), 38, 2015 |
| 10 |
Effect of annealing temperature on formation of superparamagnetism in CoFeB/MgO/CoFeB magnetic tunnel junctions
Cao JW, Liu Y, Ren Y, Wei FL, Freitas PP
Applied Surface Science, 314, 443, 2014 |
