| 1 |
Effect of deep cryotreated tungsten carbide electrode and SiC powder on EDM performance of AISI 304
Bhaumik M, Maity K
Particulate Science and Technology, 37(8), 977, 2019 |
| 2 |
Non-linear Compensated Dwell Time for Efficient Fused Silica Surface Figuring Using Inductively Coupled Plasma
Dai ZC, Xie XH, Chen H, Zhou L
Plasma Chemistry and Plasma Processing, 38(2), 443, 2018 |
| 3 |
Nd3+-doped colloidal SiO2 composite abrasives: Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers
Liu TT, Lei H
Applied Surface Science, 413, 16, 2017 |
| 4 |
Arc-Enhanced Plasma Machining Technology for High Efficiency Machining of Silicon Carbide
Shi BL, Dai YF, Xie XH, Li SY, Zhou L
Plasma Chemistry and Plasma Processing, 36(3), 891, 2016 |
| 5 |
Fe-N-x/C assisted chemical mechanical polishing for improving the removal rate of sapphire
Xu L, Zou CL, Shi XL, Pan GS, Luo GH, Zhou Y
Applied Surface Science, 343, 115, 2015 |
| 6 |
Powder Mixed Dielectric: An Approach for Improved Process Performance in EDM
Batish A, Bhattacharya A, Kumar N
Particulate Science and Technology, 33(2), 150, 2015 |
| 7 |
Effect of ionic strength on ruthenium CMP in H2O2-based slurries
Jiang L, He YY, Li YZ, Luo JB
Applied Surface Science, 317, 332, 2014 |
| 8 |
Influence of Zn (II) ion on abrasive-free polishing of hard disk substrate
Lei H, Zhao R, Chen RL
Thin Solid Films, 562, 377, 2014 |
| 9 |
Preparation of porous Fe2O3/SiO2 nanocomposite abrasives and their chemical mechanical polishing behaviors on hard disk substrates
Li H, Lei H, Chen RL
Thin Solid Films, 520(19), 6174, 2012 |
| 10 |
Effect of additives for higher removal rate in lithium niobate chemical mechanical planarization
Jeong S, Lee H, Cho H, Lee S, Kim H, Kim S, Park J, Jeong H
Applied Surface Science, 256(6), 1683, 2010 |
