| 1 |
Increased nitrogen doping of thin lateral SiC cantilevers
Trunek AJ, Neudeck PG, Matocha K, Dunne G
Journal of Crystal Growth, 310(7-9), 1794, 2008 |
| 2 |
Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers
Neudeck PG, Powell JA, Trunek AJ, Spry DJ
Materials Science Forum, 457-460, 169, 2004 |
| 3 |
Polytype identification and mapping in heteroepitaxial growth of 3C on atomically flat 4H-SiC mesas using synchrotron white-beam X-ray topography
Dudley M, Vetter WM, Huang XR, Neudeck PG, Powell JA
Materials Science Forum, 389-3, 391, 2002 |
| 4 |
Selective area MBE of GaAs, AlAs and their alloys by periodic supply epitaxy
Nishinaga T, Bacchin G
Thin Solid Films, 367(1-2), 6, 2000 |
| 5 |
Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates
Jin G, Liu JL, Luo YH, Wang KL
Thin Solid Films, 369(1-2), 49, 2000 |
| 6 |
Selective growth of semi-insulating InP around masked nonplanar structures using low-pressure pulsed metallorganic epitaxy
Bertone D, Fang RY, Morello G, Meliga M
Journal of the Electrochemical Society, 146(3), 1167, 1999 |
| 7 |
Recent understandings of elementary growth processes in MBE of GaAs
Nishinaga T, Yamashiki A
Thin Solid Films, 343-344, 495, 1999 |
