검색결과 : 33건
| No. | Article |
|---|---|
| 1 |
Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices Gamarra P, Lacam C, Tordjman M, Splettstosser J, Schauwecker B, di Forte-Poisson MA Journal of Crystal Growth, 414, 232, 2015 |
| 2 |
Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy Bushell ZL, Ludewig P, Knaub N, Batool Z, Hild K, Stolz W, Sweeney SJ, Volz K Journal of Crystal Growth, 396, 79, 2014 |
| 3 |
AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation Miya SS, Wagener V, Botha JR Journal of Crystal Growth, 370, 177, 2013 |
| 4 |
Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE Sommer N, Buss R, Ohlmann J, Wegele T, Jurecka C, Liebich S, Kunert B, Stolz W, Volz K Journal of Crystal Growth, 370, 191, 2013 |
| 5 |
The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys Han SS, Panyakeow S, Ratanathammaphan S, Higo A, Wang YP, Deura M, Sugiyama M, Nakano Y Canadian Journal of Chemical Engineering, 90(4), 915, 2012 |
| 6 |
2 dimensional electron gas uniformity of GaN HFET layers on SiC Wallis DJ, Wright PJ, Soley DEJ, Koker L, Uren MJ, Martin T Journal of Crystal Growth, 338(1), 125, 2012 |
| 7 |
Growth and optical characterisation of multilayers of InGaN quantum dots Zhu TT, El-Ella HAR, Reid B, Holmes MJ, Taylor RA, Kappers MJ, Oliver RA Journal of Crystal Growth, 338(1), 262, 2012 |
| 8 |
The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy Sadler TC, Kappers MJ, Oliver RA Journal of Crystal Growth, 314(1), 13, 2011 |
| 9 |
GaP-nucleation on exact Si (001) substrates for III/V device integration Volz K, Beyer A, Witte W, Ohlmann J, Nemeth I, Kunert B, Stolz W Journal of Crystal Growth, 315(1), 37, 2011 |
| 10 |
MOVPE growth and properties of light emitting diodes with an incorporated InMnAs ferromagnetic layer Novak J, Telek P, Vavra I, Hasenohrl S, Reiffers M Journal of Crystal Growth, 315(1), 78, 2011 |