| 1 |
Organolead halide perovskite-based metal-oxide-semiconductor structure photodetectors achieving ultrahigh detectivity
Wang YC, Zhang YM, Pang TQ, Sun K, Hu ZY, Zhu YJ, Jia RX
Solar Energy, 183, 226, 2019 |
| 2 |
Chemical state of phosphorous at the SiC/SiO2 interface
Pitthan E, Amarasinghe VP, Xu C, Gobbi AL, Dartora GHS, Gustafsson T, Feldman LC, Stedile FC
Thin Solid Films, 675, 172, 2019 |
| 3 |
Germanium nanoparticles grown at different deposition times for memory device applications
Mederos M, Mestanza SNM, Lang R, Doi I, Diniz JA
Thin Solid Films, 611, 39, 2016 |
| 4 |
Electrical, optical and micro-structural properties of ultra-thin HfTiON films
Zhang JQ, Li ZX, Zhou H, Ye C, Wang H
Applied Surface Science, 294, 58, 2014 |
| 5 |
Metal-oxide-semiconductor characteristics of thermally grown nitrided SiO2 thin film on 4H-SiC in various N2O ambient
Cheong KY, Moon J, Kim HJ, Bahng W, Kim NK
Thin Solid Films, 518(12), 3255, 2010 |
| 6 |
Analysis of the improvement of Al-Ta2O5/SiO2-Si structures reliability by Si substrate plasma nitridation in N2O
Novkovski N
Thin Solid Films, 517(15), 4394, 2009 |
| 7 |
Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation
Aygun G, Turan R
Thin Solid Films, 517(2), 994, 2008 |
| 8 |
Polysilicon high frequency devices for large area electronics: Characterization, simulation and modeling
Botrel JL, Savry O, Rozeau O, Templier F, Jomaah J
Thin Solid Films, 515(19), 7422, 2007 |
| 9 |
Thermal annealing effects on the interface state density of metal-oxide-semiconductor capacitors with electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide
Maiolo L, Pecora A, Cuscuna M, Fortunato G
Thin Solid Films, 515(19), 7590, 2007 |
| 10 |
The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors
Chang ACK, Ross IM, Norris DJ, Cullis AG, Tang YT, Cerrina C, Evans AGR
Thin Solid Films, 496(2), 306, 2006 |
